Self‐repairable, high‐uniform conductive‐bridge random access memory based on amorphous NbSe2
Bojing Lu,
Dunan Hu,
Ruqi Yang,
Jigang Du,
Lingxiang Hu,
Siqin Li,
Fengzhi Wang,
Jingyun Huang,
Pingwei Liu,
Fei Zhuge,
Yu‐Jia Zeng,
Zhizhen Ye,
Jianguo Lu
Affiliations
Bojing Lu
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory for Biomedical Engineering of Ministry of Education School of Materials Science and Engineering, Zhejiang University Hangzhou China
Dunan Hu
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory for Biomedical Engineering of Ministry of Education School of Materials Science and Engineering, Zhejiang University Hangzhou China
Ruqi Yang
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory for Biomedical Engineering of Ministry of Education School of Materials Science and Engineering, Zhejiang University Hangzhou China
Jigang Du
State Key Laboratory of Chemical Engineering College of Chemical and Biological Engineering, Zhejiang University Hangzhou China
Lingxiang Hu
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo China
Siqin Li
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory for Biomedical Engineering of Ministry of Education School of Materials Science and Engineering, Zhejiang University Hangzhou China
Fengzhi Wang
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory for Biomedical Engineering of Ministry of Education School of Materials Science and Engineering, Zhejiang University Hangzhou China
Jingyun Huang
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory for Biomedical Engineering of Ministry of Education School of Materials Science and Engineering, Zhejiang University Hangzhou China
Pingwei Liu
State Key Laboratory of Chemical Engineering College of Chemical and Biological Engineering, Zhejiang University Hangzhou China
Fei Zhuge
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo China
Yu‐Jia Zeng
College of Physics and Optoelectronic Engineering, Shenzhen University Shenzhen China
Zhizhen Ye
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory for Biomedical Engineering of Ministry of Education School of Materials Science and Engineering, Zhejiang University Hangzhou China
Jianguo Lu
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory for Biomedical Engineering of Ministry of Education School of Materials Science and Engineering, Zhejiang University Hangzhou China
Abstract Conductive‐bridge random access memory (CBRAM) emerges as a promising candidate for next‐generation memory and storage device. However, CBRAMs are prone to degenerate and fail during electrochemical metallization processes. To address this issue, herein we propose a self‐repairability strategy for CBRAMs. Amorphous NbSe2 was designed as the resistive switching layer, with Cu and Au as the top and bottom electrodes, respectively. The NbSe2 CBRAMs demonstrate exceptional cycle‐to‐cycle and device‐to‐device uniformity, with forming‐free and compliance current‐free resistive switching characteristics, low‐operation voltage, and competitive endurance and retention performance. Most importantly, the self‐repairable behavior is discovered for the first time in CBRAM. The device after failure can recover its performance to the initially normal state by operating with a slightly large reset voltage. The existence of Cu conductive filament and excellent controllability of Cu migration in the NbSe2 switching layer has been revealed by a designed broken‐down point approach, which is responsible for the self‐repairable behavior of NbSe2 CBRAMs. Our self‐repairable and high‐uniform amorphous NbSe2 CBRAM may open the door to the development of memory and storage devices in the future.
