The photodiode performances of NDI-appended ruthenium complexes

Abstract

The synthesis and investigation of photoelectric studies of simple organic compounds as organic interlayers are of significant importance and widely studied. As such, we synthesized naphthalene diimide (NDI)-appended ruthenium complexes (Ru-NDIs) to function as the interface layer, and have fabricated novel Al/NDIs or Ru-NDIs/p-Si devices ( D1 - D4 ) to investigate their photoelectric properties. Subsequently, we compared and discussed the photoelectric properties of these devices after synthesis and fabrication. According to this, the band-gap energy ( E _g ) values of organic materials were found to range from 2.95 eV to 3.14 eV, making them ideal for solar cells applications. Additionally, the photoresponse (Pr) values of Al/NDIs or Ru-NDIs/p-Si devices ( D1 - D4 ) were found to be 59.25, 1593.08, 198.77, and 134.47, respectively. Moreover, the Al/Ru-NDIs/ p -Si D2 structure exhibited the highest Pr values. Experimental results indicate that since the four optoelectronic devices arranged with the derivation of synthesized compounds have good photoresponse characteristics, they can be utilized as a photosensor or photodiodes in different electronic and optoelectronic technologies.

Keywords

• electrical properties
• photoelectrical performances
• ruthenium complex
• naphthalene diimide