A Sub-6G SP32T Single-Chip Switch with Nanosecond Switching Speed for 5G Applications in 0.25 μm GaAs Technology

Abstract

This paper presents a single-pole 32-throw (SP32T) switch with an operating frequency of up to 6 GHz for 5G communication applications. Compared to the traditional SP32T module implemented by the waveguide package with large volume and power, the proposed switch can significantly simplify the system with a smaller size and light weight. The proposed SP32T scheme utilizing tree structure can dramatically reduce the dc power and enhance isolation between different output ports, which makes it suitable for low-power 5G communication. A design methodology of a novel transmission (ABCD) matrix is proposed to optimize the switch, which can achieve low insertion loss and high isolation simultaneously. The average insertion loss and the isolations are 1.5 and 35 dB at 6 GHz operating frequency, respectively. The switch exhibits the measured input return loss which is better than 10 dB at 6 GHz. The 1 dB input compression point of SP32T is 15 dBm. The prototype is designed in 5 V 0.25 μm GaAs technology and occupies a small area of 12 mm2.

Keywords

• single-pole 32-throw (SP32T) switch
• sub-6G
• pseudomorphic high-electron-mobility transistor (pHEMT)
• GaAs process