In capacitive microelectromechanical system (MEMS) devices, the application of dielectric materials causes long-term charging problems in the dielectric layers or substrates, which especially affect the repeatability and stability of high-performance devices. Due to the difficulties of observation and characterization of charge accumulation, an accurate characterization method is needed to study the effect of charge and propose suppression methods. In this paper, we analyze the influence of charge accumulation on the MSRG and propose a characterization method for charge accumulation based on stiffness variation. Experiments are carried out to characterize the charge accumulation in MSRG, and the effect of temperature on the process is also investigated. In the experiment, the charge accumulation is characterized accurately by the variation of the frequency split and stiffness axes. Furthermore, the acceleration of the charge accumulation is observed at high temperatures, as is the higher additional voltage from the charge accumulation.
