Ceramics (Jun 2024)
0.98(K<sub>0.5</sub>Na<sub>0.5</sub>)NbO<sub>3</sub>–0.02(Bi<sub>0.5</sub>Na<sub>0.5</sub>)(Zr<sub>0.85</sub>Sn<sub>0.15</sub>)O<sub>3</sub> Single Crystals Grown by the Seed-Free Solid-State Crystal Growth Method and Their Characterization
Abstract
(K0.5Na0.5)NbO3-based single crystals are of interest as high-performance lead-free piezoelectric materials, but conventional crystal growth methods have some disadvantages such as the requirement for expensive Pt crucibles and difficulty in controlling the composition of the crystals. Recently, (K0.5Na0.5)NbO3-based single crystals have been grown by the seed-free solid-state crystal growth method, which can avoid these problems. In the present work, 0.98(K0.5Na0.5)NbO3–0.02(Bi0.5Na0.5)(Zr0.85Sn0.15)O3 single crystals were grown by the seed-free solid-state crystal growth method. Sintering aids of 0.15 mol% Li2CO3 and 0.15 mol% Bi2O3 were added to promote single crystal growth. Pellets were sintered at 1150 °C for 15–50 h. Single crystals started to appear from 20 h. The single crystals grown for 50 h were studied in detail. Single crystal microstructure was studied by scanning electron microscopy of the as-grown surface and cross-section of the sample and revealed porosity in the crystals. Electron probe microanalysis indicated a slight reduction in K and Na content of a single crystal as compared to the nominal composition. X-ray diffraction shows that the single crystals contain mixed orthorhombic and tetragonal phases at room temperature. Raman scattering and impedance spectroscopy at different temperatures observed rhombohedral–orthorhombic, orthorhombic–tetragonal and tetragonal–cubic phase transitions. Polarization–electric field (P–E) hysteresis loops show that the single crystal is a normal ferroelectric material with a remanent polarization (Pr) of 18.5 μC/cm2 and a coercive electrical field (Ec) of 10.7 kV/cm. A single crystal presents d33 = 362 pC/N as measured by a d33 meter. Such a single crystal with a large d33 and high Curie temperature (~370 °C) can be a promising candidate for piezoelectric devices.
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