Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method

Abstract

The formation conditions of gold nanofilms on a silicon (Si) substrate by galvanic replacement in a dimethyl sulfoxide (DMSO) solvent and their subsequent use for the fabrication of Si nanostructures by metal-assisted chemical etching (MACE) method were under study. We found that the average size and number of Au nanoparticles increase with an increase in the reducible metal ion concentration from 2 to 8 mM HAuCl4 in DMSO, whereas the distribution of Au nanoparticles in height remains low for all concentrations of the reducible metal. In the temperature range 40-70 °C, a different morphology of the deposited Au nanofilms observed. In particular, at 40 °C, the film is porous mainly homogeneous, whereas at a temperature of 50 °C the film is rougher. The subsequent rise in temperature from 60 °C to 70 °C results in the formation of Au nanofilm with a discontinuous morphology. It was established that regardless of the morphology of deposited Au nanofilms, the Si nanostructures maintain a vertical orientation to the plane of the Si substrate during MACE-etching. The produced Si nanostructures were 1.5-2.5 μm in height and their average diameter ranged from 100 to 300 nm.

Keywords

• гальванічне заміщення
• наночастинки
• плівки золота
• наноструктури кремнію
• метал-каталітичне хімічне травлення