DEPENDENCE OF CHARACTERICTICS OF ALGAAS BASED SOLAR CELL ON THICKNESS AND DOPING LEVEL BASE

Abstract

Simulation of dependencies of characteristics of AlGaAs based solar cell, using AFORS-HET program, on thickness d and doping level NA base has been performed. It is found that increasing the thickness of the base from 1 to 10 microns leads to a dramatic increase in efficiency with 9,42 % at 1 microns to 33,03 % at 10 microns. Open circuit voltage Uoc, by increasing the thickness of the base from 1 to 50 microns increased by 95 mV. Increasing the doping level of the base leads to an increase short circuit current from 13,91 to 23,34 mA/cm2. The open circuit voltage will be increased from 1.487 to 1.594 V.

Keywords

• солнечные элементы
• фотоэлектрические преобразователи
• вольтамперная характеристика
• внешний квантовый выход
• solar cells
• photovoltaic
• current-voltage characteristic
• external quantum efficiency