Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

Qing Cai; Qian Li; Mo Li; Yin Tang; Jin Wang; Junjun Xue; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

doi:10.1109/JPHOT.2019.2914146

IEEE Photonics Journal (Jan 2019)

Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

Qing Cai,
Qian Li,
Mo Li,
Yin Tang,
Jin Wang,
Junjun Xue,
Dunjun Chen,
Hai Lu,
Rong Zhang,
Youdou Zheng

Affiliations

Qing Cai: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Qian Li: Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China
Mo Li: Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China
Yin Tang: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Jin Wang: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Junjun Xue: School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Dunjun Chen: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Hai Lu: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Rong Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Youdou Zheng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China

DOI: https://doi.org/10.1109/JPHOT.2019.2914146
Journal volume & issue: Vol. 11, no. 3
pp. 1 – 7

Abstract

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Back-illuminated Al0.1Ga0.9N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device performance were investigated. The avalanche breakdown voltage was found to increase as the multiplication layer thickness (MLT) increases. The APD with 230-nm-MLT achieved a superior maximum multiplication gain of 5.4 × 104, higher than that obtained in devices with 150-nm- and 300-nm-MLT. Theoretical simulations demonstrated that the critical electric field intensity in an avalanche region would decrease as the rising of MLT, indicating the modulating ability of multiplication scaling on the AlGaN APD performance. In addition, APDs fabricated on different AlN templates were employed to study the effects of crystalline quality on device properties.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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