Analysis of correlation and regression between particle ionizing radiation parameters and the stability characteristics of irradiated monocrystalline Si film

Abstract

This paper deals with the analysis of correlation and regression between the parameters of particle ionizing radiation and the stability characteristics of the irradiated monocrystalline silicon film. Based on the presented theoretical model of correlation and linear regression between two random variables, numeric and real experiments were performed. In the numeric experiment, a simulation of the effect of alpha radiation on a thin layer of monocrystalline silicon was performed by observing a number of vacancies along the film depth resulting from a single incident alpha particle. In the real experiment, the irradiation of a thin silicon film by alpha particles from a radioactive Am-241 alpha emitter was performed. The observed values of radiation effect on the Si film were specific resistance and the concentration of free charge carriers. The results showed a fine concordance between numeric and real experiments. Correlation verification of the observed values was presented by linear regression functions. [Projekat Ministarstva nauke Republike Srbije, br. 171007]

Keywords

• alpha particle
• Si film
• vacancy
• specific resistance
• free charge carrier
• correlation
• regression