Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Nathan C. Palmquist; Jared A. Kearns; Stephen Gee; Arturo Juan; Srinivas Gandrothula; Michael Lam; Steven P. Denbaars; Shuji Nakamura

doi:10.35848/1882-0786/ad119b

Applied Physics Express (Jan 2023)

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Nathan C. Palmquist,
Jared A. Kearns,
Stephen Gee,
Arturo Juan,
Srinivas Gandrothula,
Michael Lam,
Steven P. Denbaars,
Shuji Nakamura

Affiliations

Nathan C. Palmquist: ORCiD; Materials Department, University of California , Santa Barbara, California 93106, United States of America
Jared A. Kearns: Materials Department, University of California , Santa Barbara, California 93106, United States of America
Stephen Gee: Materials Department, University of California , Santa Barbara, California 93106, United States of America
Arturo Juan: Materials Department, University of California , Santa Barbara, California 93106, United States of America
Srinivas Gandrothula: ORCiD; Materials Department, University of California , Santa Barbara, California 93106, United States of America
Michael Lam: Department of Physics, University of California , Santa Barbara, California 93106, United States of America
Steven P. Denbaars: Materials Department, University of California , Santa Barbara, California 93106, United States of America; Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106, United States of America
Shuji Nakamura: Materials Department, University of California , Santa Barbara, California 93106, United States of America; Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106, United States of America

DOI: https://doi.org/10.35848/1882-0786/ad119b
Journal volume & issue: Vol. 17, no. 1
p. 016504

Abstract

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We report long cavity (65 λ ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a topside dielectric concave mirror, an ion implanted current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 10 μ m aperture and a curved mirror with a radius of curvature of 120 μ m had a threshold current density of 14 kA cm ^−2 , and a maximum output power of 370 μ W for a lasing mode at 404.5 nm. The longitudinal performance has a side-mode suppression ratio of 30 dB up to a current density of approximately 40 kA cm ^−2 . Multiple transverse mode profiles are observed across several devices.

Published in Applied Physics Express

ISSN: 1882-0778 (Print); 1882-0786 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1882-0786

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