Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge

Zhangcheng Liu; Wenyang Yi; Dan Zhao; Haris Naeem Abbasi; Tai Min; Hong-Xing Wang

doi:10.1063/5.0009883

AIP Advances (Jun 2020)

Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge

Zhangcheng Liu,
Wenyang Yi,
Dan Zhao,
Haris Naeem Abbasi,
Tai Min,
Hong-Xing Wang

Affiliations

Zhangcheng Liu: Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Wenyang Yi: Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Dan Zhao: Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Haris Naeem Abbasi: Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Tai Min: Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Hong-Xing Wang: Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

DOI: https://doi.org/10.1063/5.0009883
Journal volume & issue: Vol. 10, no. 6
pp. 065015 – 065015-4

Abstract

Read online

In this Letter, we report on demonstrating diamond avalanche diodes for obtaining a high-voltage pulse with a subnanosecond front edge. Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave remains almost the same, indicating good stability. By applying a reverse DC 100 V bias, the front edge shortens to be 0.675 ns, while the rectifier characteristics degrade and the output voltage is limited. Therefore, the reverse bias should be optimized to obtain both the fast front edge and high output voltage. The results show that diamond avalanche diodes have a promising application for high-voltage pulse sources.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

About the journal