Structural properties of GeSn thin films grown by molecular beam epitaxy

Z. P. Zhang; Y. X. Song; Z. Y. S. Zhu; Y. Han; Q. M. Chen; Y. Y. Li; L. Y. Zhang; S. M. Wang

doi:10.1063/1.4982245

AIP Advances (Apr 2017)

Structural properties of GeSn thin films grown by molecular beam epitaxy

Z. P. Zhang,
Y. X. Song,
Z. Y. S. Zhu,
Y. Han,
Q. M. Chen,
Y. Y. Li,
L. Y. Zhang,
S. M. Wang

Affiliations

Z. P. Zhang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. X. Song: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Z. Y. S. Zhu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. Han: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Q. M. Chen: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. Y. Li: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
L. Y. Zhang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
S. M. Wang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

DOI: https://doi.org/10.1063/1.4982245
Journal volume & issue: Vol. 7, no. 4
pp. 045211 – 045211-6

Abstract

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GeSn thin films on Ge (001) with various Sn concentrations from 3.36 to 7.62% were grown by molecular beam epitaxy and characterized. The structural properties were analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction (XRD). The lateral correlation length (LCL) and the mosaic spread (MS) were extracted for the epi-layer peaks in the asymmetric (224) diffraction. With the increase of Sn concentration, the LCL reduces while the MS increases, indicating degrading crystalline quality. Dislocations were observed in the sample with 7.62% Sn concentration by transmission electron microscope, consistent with the strain relaxation found in XRD mapping. Besides, the surface morphologies were investigated.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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