The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range

Abstract

In the paper, the effects of type, dose and temperature of irradiation with stable elementary particles (0.9 MeV electrons and 15 MeV protons) on the properties of the high-voltage 4H-SiC Junction Barrier Schottky diodes at room temperature (23°С) and the limiting operating one (175°С) have been compared. The electron irradiation of the objects with equal doses at 23°С и 175°С was found to cause a significant increase in its base differential resistance in the former case and the absence of this effect in the latter. However, in the latter, DLTS spectra exhibited a noticeable increase in the concentration of deep levels in the upper half of the band gap. The proton irradiation resulted in a noticeable rise in the mentioned resistance even at 175°С. The results obtained make it possible to evaluate the radiation resistance of the studied devices to proton and electron irradiation within the framework of any given requirements.

Keywords

• silicon carbide
• schottky diode
• irradiation
• dlts spectrum
• current–voltage characteristic
• annealing