Hall element with two Schottky barrier contacts Al-p-Si

Abstract

Way of the fabrication and results of studies of electrical and photoelectric characteristics of the Hall element with two current contacts and two Hall potential contacts on one surface of the silicon plate and two contacts Al-p-Si with the barrier Schottky on inverse surface of the plate, are considered. Explored Hall element has a simple technology of the fabrication and possesses extended functional possibilities.

Keywords

• way of the fabrication of the hall element
• silicon p-type
• schottky barrier contacts al-p-si