Toward CMOS like devices from two-dimensional channel materials

Abstract

This research update explains in detail the critical aspects of Schottky barrier (SB) field-effect transistors (FETs) for circuit implementations. In particular, it focuses on two-dimensional (2D) channel materials such as black phosphorus. After an initial tutorial about the operation of SB-FETs, this article discusses various scaling approaches and how proper unipolar device characteristics from 2D layered materials can be obtained. Various transistor layouts described in the literature are evaluated in terms of the achieved device performance specs, and the most advanced experimental approach is presented that combines proper scaling, source/drain work function engineering, and gating. This article closes by highlighting the performance of an inverter obtained from properly designed BP-based n-type and p-type transistors.