Modification of the Spectral Absorption Characteristics of ZnGeP<sub>2</sub> in the THz and IR Wavelength Ranges Due to Diffusion Doping with Impurity Atoms of Mg, Se, Sn, and Pb
Nikolay Yudin,
Victor Dyomin,
Sergey Podzyvalov,
Alexey Lysenko,
Houssain Baalbaki,
Mikhail Zinovev,
Vladimir Kuznetsov,
Elena Slyunko,
Akmal Gabdrakhmanov,
Andrey Kalsin,
Vladimir Voevodin,
Maxim Kulesh,
Denis Vlasov
Affiliations
Nikolay Yudin
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Victor Dyomin
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Sergey Podzyvalov
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Alexey Lysenko
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Houssain Baalbaki
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Mikhail Zinovev
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Vladimir Kuznetsov
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Elena Slyunko
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Akmal Gabdrakhmanov
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Andrey Kalsin
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Vladimir Voevodin
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Maxim Kulesh
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
Denis Vlasov
Scientific Educational Center “Optical and Photonic Technologies”, National Research Tomsk State University, 634050 Tomsk, Russia
This study demonstrates that diffusion doping of ZGP single crystals with impurity atoms (Mg, Se, Sn, Pb) leads to a decrease in the specific conductivity of the samples. Consequently, this results in reduced absorption in the terahertz frequency range (150–1000 μm). It has been shown that doping ZGP samples with selenium (Se) and lead (Pb) atoms reduces absorption in the infrared region from 0.3–0.6 cm−1 to 0.06–0.09 cm−1. Doping with tin (Sn) leads to a decrease in absorption only in the wavelength region near 2.1 μm from 0.2 cm−1 to 0.05 cm−1. The proposed mechanism for the decrease in infrared absorption is a reduction in zinc vacancies due to doping with impurity atoms. This research lays the groundwork for a technology that produces ZGP crystals with minimal absorption within the 2–8 μm wavelength range, eliminating the need for fast electron beam irradiation technology. This advancement will facilitate the fabrication of ZGP crystals with arbitrary apertures.
