Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies
L. Nicolas,
T. Delord,
P. Huillery,
E. Neu,
G. Hétet
Affiliations
L. Nicolas
Laboratoire Pierre Aigrain, Ecole normale supérieure, PSL Research University, CNRS, Université Pierre et Marie Curie, Sorbonne Universités, Université Paris Diderot, Sorbonne Paris-Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France
T. Delord
Laboratoire Pierre Aigrain, Ecole normale supérieure, PSL Research University, CNRS, Université Pierre et Marie Curie, Sorbonne Universités, Université Paris Diderot, Sorbonne Paris-Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France
P. Huillery
Laboratoire Pierre Aigrain, Ecole normale supérieure, PSL Research University, CNRS, Université Pierre et Marie Curie, Sorbonne Universités, Université Paris Diderot, Sorbonne Paris-Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France
E. Neu
Universität des Saarlandes, 66123 Saarbrücken, Germany
G. Hétet
Laboratoire Pierre Aigrain, Ecole normale supérieure, PSL Research University, CNRS, Université Pierre et Marie Curie, Sorbonne Universités, Université Paris Diderot, Sorbonne Paris-Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France
Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.
