The Impact of Nanostructured Silicon and Hybrid Materials on the Thermoelectric Performance of Thermoelectric Devices: Review

Abstract

Nanostructured materials remarkably improve the overall properties of thermoelectric devices, mainly due to the increase in the surface-to-volume ratio. This behavior is attributed to an increased number of scattered phonons at the interfaces and boundaries of the nanostructures. Among many other materials, nanostructured Si was used to expand the power generation compared to bulk crystalline Si, which leads to a reduction in thermal conductivity. However, the use of nanostructured Si leads to a reduction in the electrical conductivity due to the formation of low dimensional features in the heavily doped Si regions. Accordingly, the fabrication of hybrid nanostructures based on nanostructured Si and other different nanostructured materials constitutes another strategy to combine a reduction in the thermal conductivity while keeping the good electrical conduction properties. This review deals with the properties of Si-based thermoelectric devices modified by different nanostructures and hybrid nanostructured materials.

Keywords

• thermoelectric devices
• phonon scattering
• nanostructured Si
• hybrid nanostructures