In this paper, the effect of temperature on Single-Electron Transistor (SET) electrical behavior is investigated. In particular, a study of the current-voltage (I-V) curves according to parameter (temperature and gate voltage) variation is presented. Among others, the interesting phenomenon of the N-type negative differential resistance is reported as the temperature increases from absolute zero (0 K) to room temperature. Finally, theoretical analysis and simulation shows that the choice of the appropriate temperature and gate-voltage combination the SET I-V curves demonstrates either a negative differential resistance region, a switching effect, or a simple resistance behavior.
