Materials Research Express (Jan 2020)

H1N1 influenza virus interaction with a porous layer of silicon nanowires

  • Kirill A Gonchar,
  • Svetlana N Agafilushkina,
  • Daniil V Moiseev,
  • Ivan V Bozhev,
  • Anatolij A Manykin,
  • Ekaterina A Kropotkina,
  • Alexandra S Gambaryan,
  • Liubov A Osminkina

DOI
https://doi.org/10.1088/2053-1591/ab7719
Journal volume & issue
Vol. 7, no. 3
p. 035002

Abstract

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Here, the non-specific interaction of the H1N1 influenza virus with a porous layer of silicon nanowires (PSi NWs) was studied by transmission and scanning electron microscopy (TEM, SEM, respectively) and optical spectroscopy. PSi NW layer with a thickness of about 200 nm was fabricated by metal-assisted chemical etching of p-type highly doped crystalline silicon wafers, and consist of porous nanowires with a diameter of 50–200 nm, and a distance between the nanowires of 100–200 nm. It was shown that during the adsorption of viruses, viral particles with a diameter of about 100 nm bind to the porous surface of the nanowires. This interaction was revealed using TEM, SEM, and causes wavelength shifts in the Fabry–Perot fringes in the reflection spectrum of visible light from the PSi NW layer. The results show that thin layers of PSi NWs are a promising nanomaterial for creating filters and sensors for binding and detection of viruses.

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