A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe<sub>2</sub>O<sub>3</sub> Nanowire Arrays
Zhiqiang Yu,
Jiamin Xu,
Baosheng Liu,
Zijun Sun,
Qingnan Huang,
Meilian Ou,
Qingcheng Wang,
Jinhao Jia,
Wenbo Kang,
Qingquan Xiao,
Tinghong Gao,
Quan Xie
Affiliations
Zhiqiang Yu
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Jiamin Xu
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Baosheng Liu
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Zijun Sun
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Qingnan Huang
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Meilian Ou
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Qingcheng Wang
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Jinhao Jia
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Wenbo Kang
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Qingquan Xiao
Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
Tinghong Gao
Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
Quan Xie
Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction. The W/α-Fe2O3/FTO memory device with the nonvolatile resistive switching behavior has been achieved. The resistance ratio (RHRS/RLRS) of the W/α-Fe2O3/FTO memory device exceeds two orders of magnitude, which can be preserved for more than 103s without obvious decline. Furthermore, the carrier transport properties of the W/α-Fe2O3/FTO memory device are dominated by the Ohmic conduction mechanism in the low resistance state and trap-controlled space-charge-limited current conduction mechanism in the high resistance state, respectively. The partial formation and rupture of conducting nanofilaments modified by the intrinsic oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behavior of the W/α-Fe2O3/FTO memory device. This work suggests that the as-prepared α-Fe2O3 nanowire-based W/α-Fe2O3/FTO memory device may be a potential candidate for applications in the next-generation nonvolatile memory devices.
