Observation of gain-pinned dissipative solitons in a microcavity laser
M. Pieczarka,
D. Poletti,
C. Schneider,
S. Höfling,
E. A. Ostrovskaya,
G. Sęk,
M. Syperek
Affiliations
M. Pieczarka
Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
D. Poletti
Science and Math Cluster, Singapore University of Technology and Design, 8 Somapah Road, 487372, Singapore
C. Schneider
Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
S. Höfling
Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
E. A. Ostrovskaya
ARC Centre of Excellence in Future Low-Energy Electronics Technologies and Nonlinear Physics Centre, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
G. Sęk
Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
M. Syperek
Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
We demonstrate an experimental approach for creating spatially localized states in a semiconductor microcavity laser. In particular, we shape the spatial gain profile of a quasi-one-dimensional microcavity laser with a nonresonant, pulsed optical pump to create spatially localized structures, known as gain-pinned dissipative solitons, that exist due to the balance of gain and nonlinear losses. We directly probe the ultrafast formation dynamics and decay of these localized structures, showing that they are created on a picosecond timescale, orders of magnitude faster than laser cavity solitons. All of the experimentally observed features and dynamics are reconstructed by numerical modeling using a complex Ginzburg–Landau model, which explicitly takes into account the carrier density dynamics in the semiconductor.