A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70% porosity we show the value of 35 W m-1 K-1. The method can be easily applied for any other porous or otherwise structured low-dimensional media.DOI: http://dx.doi.org/10.5755/j01.ms.21.2.5785
