On the Optical Response of Tellurium Activated Zinc Selenide ZnSe:Te Single Crystal
Dionysios Linardatos,
Anastasios Konstantinidis,
Ioannis Valais,
Konstantinos Ninos,
Nektarios Kalyvas,
Athanasios Bakas,
Ioannis Kandarakis,
George Fountos,
Christos Michail
Affiliations
Dionysios Linardatos
Department of Biomedical Engineering, Radiation Physics, Materials Technology and Biomedical Imaging Laboratory, University of West Attica, Ag. Spyridonos, 12210 Athens, Greece
Anastasios Konstantinidis
Radiological Sciences Group, Department of Medical Physics, Portsmouth Hospitals University NHS Trust, Queen Alexandra Hospital, Portsmouth L8S 4L8, UK
Ioannis Valais
Department of Biomedical Engineering, Radiation Physics, Materials Technology and Biomedical Imaging Laboratory, University of West Attica, Ag. Spyridonos, 12210 Athens, Greece
Konstantinos Ninos
Department of Biomedical Sciences, University of West Attica, Ag. Spyridonos, 12210 Athens, Greece
Nektarios Kalyvas
Department of Biomedical Engineering, Radiation Physics, Materials Technology and Biomedical Imaging Laboratory, University of West Attica, Ag. Spyridonos, 12210 Athens, Greece
Athanasios Bakas
Department of Biomedical Sciences, University of West Attica, Ag. Spyridonos, 12210 Athens, Greece
Ioannis Kandarakis
Department of Biomedical Engineering, Radiation Physics, Materials Technology and Biomedical Imaging Laboratory, University of West Attica, Ag. Spyridonos, 12210 Athens, Greece
George Fountos
Department of Biomedical Engineering, Radiation Physics, Materials Technology and Biomedical Imaging Laboratory, University of West Attica, Ag. Spyridonos, 12210 Athens, Greece
Christos Michail
Department of Biomedical Engineering, Radiation Physics, Materials Technology and Biomedical Imaging Laboratory, University of West Attica, Ag. Spyridonos, 12210 Athens, Greece
In this study, the light output of a zinc selenide activated with tellurium (ZnSe: Te) single crystal was measured for X-ray radiography applications. A cubic crystal (10 × 10 × 10 mm) was irradiated using X-rays with tube voltages from 50 to 130 kV. The resulting energy absorption efficiency, detective quantum efficiency, and absolute luminescence efficiency were compared to published data for equally sized GSO: Ce (gadolinium orthosilicate) and BGO (bismuth germanium oxide) crystals. The emitted light was examined to estimate the spectral compatibility with widely used optical sensors. Energy absorption efficiency and detective quantum efficiency of ZnSe: Te and BGO were found to be similar, within the X-ray energies in question. Light output of all three crystals showed a tendency to increase with increasing X-ray tube voltage, but ZnSe: Te stood at least 2 EU higher than the others. ZnSe: Te can be coupled effectively with certain complementary metal–oxide–semiconductors (CMOS), photocathodes, and charge-coupled-devices (CCD), as the effective luminescence efficiency results assert. These properties render the material suitable for various imaging applications, dual-energy arrays included.
