This paper proposes a new method for characterization of 2D materials under the precisely specified conditions. It is achieved by integration of a 2D material as a field effect transistors structures with a piezoelectric resonator. Properties of the 2D material can be mechanically adjusted by the resonator. It results in the independent and precise control of an amplitude of induced mechanical strain, its modulating frequency, which all influence the 2D material properties. The electrical field required to measure 2D material field effect transistors will not be affected by the vibrations, thus giving us a chance to perform the precise measurement of the electrical properties of the 2D material. This approach has a great potential for measuring and monitoring cells, enzymes, nucleic acids, deoxyribonucleic acid and ribonucleic acid. It can be also used for measurement of toxic, combustive or waste gases.
