Scientific Reports (Mar 2022)

Quantified density of performance-degrading near-interface traps in SiC MOSFETs

  • Mayank Chaturvedi,
  • Sima Dimitrijev,
  • Daniel Haasmann,
  • Hamid Amini Moghadam,
  • Peyush Pande,
  • Utkarsh Jadli

DOI
https://doi.org/10.1038/s41598-022-08014-5
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 9

Abstract

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Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work, we have applied a newly developed integrated-charge technique to measure the density of NITs that are active in the above-threshold region of commercial SiC MOSFETs. The results demonstrate that NITs trap about 10% of the channel electrons for longer than 500 ns.