Four-Wave Mixing Conversion in QD SOA: reservoir effects

Abstract

In this paper, it is present a model to simulate Four-wave mixing in quantum dot semiconductor optical amplifier, taking into account the influence of carrier heating at reservoir. The numerical calculations show that; the carrier heating relaxation at reservoir demonstrates a significant impact on excited state occupation probability, and opposite occurs with ground state. Also, the conversion efficiency is shown a good match with experiment data.

Keywords

• semiconductor optical amplifier
• quantum dot structure
• carrier heating and four-wave mixing