Micromachines (Nov 2021)

Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

  • Ki Yeong Kim,
  • Joo Seok Noh,
  • Tae Young Yoon,
  • Jang Hyun Kim

DOI
https://doi.org/10.3390/mi12111422
Journal volume & issue
Vol. 12, no. 11
p. 1422

Abstract

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In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (Eoff) drops by about 7% when on-state voltage (Von) and breakdown voltage (BV) are similar. Von increases by about 0.5% and BV decreases by only about 0.8%.

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