Electrically driven nanogap antennas and quantum tunneling regime

Abstract

The optical and electrical characteristics of electrically-driven nanogap antennas are extremely sensitive to the nanogap region where the fields are tightly confined and electrons and photons can interplay. Upon injecting electrons in the nanogap, a conductance channel opens between the metal surfaces modifying the plasmon charge distribution and therefore inducing an electrical tuning of the gap plasmon resonance. Electron tunneling across the nanogap can be harnessed to induce broadband photon emission with boosted quantum efficiency. Under certain conditions, the energy of the emitted photons exceeds the energy of electrons, and this overbias light emission is due to spontaneous emission of the hot electron distribution in the electrode. We conclude with the potential of electrically controlled nanogap antennas for faster on-chip communication.

Keywords

• hot carriers
• inelastic electron tunneling
• nanogap antennas
• photon emission
• quantum regime
• tunnel junction