High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer

Xu Liu; Shengrui Xu; Hongchang Tao; Yanrong Cao; Xinhao Wang; Hengsheng Shan; Jincheng Zhang; Yue Hao

doi:10.1109/JPHOT.2023.3247451

IEEE Photonics Journal (Jan 2023)

High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer

Xu Liu,
Shengrui Xu,
Hongchang Tao,
Yanrong Cao,
Xinhao Wang,
Hengsheng Shan,
Jincheng Zhang,
Yue Hao

Affiliations

Xu Liu: ORCiD; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
Shengrui Xu: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
Hongchang Tao: ORCiD; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
Yanrong Cao: School of Mechanical and Electrical Engineering, Xidian University, Xi'an, China
Xinhao Wang: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
Hengsheng Shan: ORCiD; Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Weiyang University Park, Xi'an, China
Jincheng Zhang: ORCiD; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
Yue Hao: ORCiD; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China

DOI: https://doi.org/10.1109/JPHOT.2023.3247451
Journal volume & issue: Vol. 15, no. 2
pp. 1 – 5

Abstract

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In this work, we investigate the performance improvement of N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) by the inversion of the hole injection layer from N-polar to Ga-polar. The influence of different inversion points on the performance and the energy band of DUV LED is systematically studied, and the principle of performance improvement of DUV LED is explained in detail through the analysis of the energy band. Furthermore, according to the simulation results and practical application, an appropriate inversion point is selected. Under the current of 120 mA, with polarity inversion of the hole injection layer, the light output power of the DUV LEDs increases from 21.34 mW to 29.71 mW, and the applied voltage reduces from 16.06 V to 9.63 V. The DUV LED with polarity inversion has a 132% increase in wall-plug efficiency (WPE) compared with the DUV LED which is totally along [000-1] direction. Therefore, polarity inversion is an effective way to achieve high-performance UV-LEDs.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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