Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS

Abstract

Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si). Keywords: super beta-transistor, heterostructure, gallium arsenide, silicon, reactors electron-cyclotron resonance.