Highly flexible TFT monolithic-integrated (Bi,Sb)2Se3 SWIR photodetector for wearable health monitoring and curved-surface imaging
Ruisi Gao,
Fu Li,
Haozhe Yang,
Feifan Yang,
Ling Lin,
Jungang He,
Zicheng Tang,
Xuke Yang,
Chong Dong,
Chao Chen,
Shenglin Jiang,
Jiang Tang,
Guangzu Zhang,
Kanghua Li
Affiliations
Ruisi Gao
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Fu Li
Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Wuhan, Hubei 430074, P.R. China
Haozhe Yang
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Feifan Yang
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Ling Lin
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Jungang He
Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430205, P.R. China
Zicheng Tang
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Xuke Yang
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Chong Dong
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Chao Chen
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Shenglin Jiang
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China
Jiang Tang
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China; Optics Valley Laboratory, Hubei 430074, P.R. China
Guangzu Zhang
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China; Corresponding author
Kanghua Li
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics (WNLO), Engineering Research Center for Functional Ceramics MOE, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P.R. China; Optics Valley Laboratory, Hubei 430074, P.R. China; Corresponding author
Summary: Flexible short-wavelength infrared (SWIR) detectors are significant for wearable health monitoring, artificial vision systems, etc. However, it is difficult to realize flexibility in mainstream SWIR photodetectors, like InGaAs and HgCdTe, because of high fabrication temperature and epitaxial growth on single-crystal substrates. Herein, we report a highly flexible thin-film transistor (TFT) monolithic-integrated SWIR photodetector based on one-dimensional (Bi,Sb)2Se3. A high external quantum efficiency of 29% at 1,300 nm and fast response time are achieved. The device exhibits excellent flexibility due to the high mechanical tolerance of the one-dimensional structure, retaining 97% of the original value after bending at a 0.05 mm radius. It also presents high electric and thermal stability, maintaining 97.6% of the original value after annealing for 408 h at 90°C. Finally, applications for wearable heart rate monitors and curved-surface imaging are demonstrated. This work highlights the potential of (Bi,Sb)2Se3 SWIR photodetector for flexible electronics.
