Memristor crossbar array for binarized neural networks
Yong Kim,
Won Hee Jeong,
Son Bao Tran,
Hyo Cheon Woo,
Jihun Kim,
Cheol Seong Hwang,
Kyeong-Sik Min,
Byung Joon Choi
Affiliations
Yong Kim
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Korea
Won Hee Jeong
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Korea
Son Bao Tran
School of Electrical Engineering, Kookmin University, Seoul 02707, Korea
Hyo Cheon Woo
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Korea
Jihun Kim
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Korea
Cheol Seong Hwang
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Korea
Kyeong-Sik Min
School of Electrical Engineering, Kookmin University, Seoul 02707, Korea
Byung Joon Choi
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Korea
Memristor crossbar arrays were fabricated based on a Ti/HfO2/Ti stack that exhibited electroforming-free behavior and low device variability in a 10 x 10 array size. The binary states of high-resistance-state and low-resistance-state in the bipolar memristor device were used for the synaptic weight representation of a binarized neural network. The electroforming-free memristor was confirmed as being suitable as a binary synaptic device because of its higher device yield, lower variability, and less severe malfunction (for example, hard break-down) than the electroformed memristors based on a Ti/HfO2/Pt structure. The feasibly working binarized neural network adopting the electroforming-free binary memristors was demonstrated through simulation.