AIP Advances (Apr 2019)

Memristor crossbar array for binarized neural networks

  • Yong Kim,
  • Won Hee Jeong,
  • Son Bao Tran,
  • Hyo Cheon Woo,
  • Jihun Kim,
  • Cheol Seong Hwang,
  • Kyeong-Sik Min,
  • Byung Joon Choi

DOI
https://doi.org/10.1063/1.5092177
Journal volume & issue
Vol. 9, no. 4
pp. 045131 – 045131-5

Abstract

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Memristor crossbar arrays were fabricated based on a Ti/HfO2/Ti stack that exhibited electroforming-free behavior and low device variability in a 10 x 10 array size. The binary states of high-resistance-state and low-resistance-state in the bipolar memristor device were used for the synaptic weight representation of a binarized neural network. The electroforming-free memristor was confirmed as being suitable as a binary synaptic device because of its higher device yield, lower variability, and less severe malfunction (for example, hard break-down) than the electroformed memristors based on a Ti/HfO2/Pt structure. The feasibly working binarized neural network adopting the electroforming-free binary memristors was demonstrated through simulation.