Effects of La-doping on piezoelectricity properties of 0.15BiInO3-0.85PbTiO3 thin films deposited by RF magnetron sputtering method
Ke-xue Sun,
Shu-yi Zhang,
Xiu-ji Shui,
Chun-sheng Liu,
Ying Zhang,
Kiyotaka Wasa
Affiliations
Ke-xue Sun
Laboratory of Modern Acoustics, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Shu-yi Zhang
Laboratory of Modern Acoustics, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Xiu-ji Shui
Laboratory of Modern Acoustics, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Chun-sheng Liu
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Ying Zhang
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Kiyotaka Wasa
Laboratory of Modern Acoustics, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
La-doped 0.15BiInO3-0.85PbTiO3 thin films are deposited on SRO/Pt/MgO substrates by RF-magnetron sputtering method. The structures of the thin films are characterized by XRD and AFM. Meanwhile, the effects of La doping concentrations on the piezoelectricity of the films are measured. At the same time, the transverse piezoelectric coefficients of the films are simulated by COMSOL combined with CASTEP calculations. The simulated results are in agreement with the experimental data, which show that the La-doping 0.15BiInO3-0.85PbTiO3 films have optimized properties by properly controlling the La doping compositions. It is found that the effective transverse piezoelectric coefficients have a maximum of -9.35 C/m2 as 3 mol.% La-doping 0.15BiInO3-0.85PbTiO3 films.
