Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jan 2022)

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

  • I. Yu. Lovshenko,
  • A. Yu. Voronov,
  • P. S. Roshchenko,
  • R. E. Ternov,
  • Ya. D. Galkin,
  • A. V. Kunts,
  • V. R. Stempitsky,
  • Jinshun Bi

DOI
https://doi.org/10.35596/1729-7648-2021-19-8-81-86
Journal volume & issue
Vol. 19, no. 8
pp. 81 – 86

Abstract

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The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

Keywords