FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE

Abstract

The results of porous silicon formation by anodization of single crystalline silicon wafers in the pulsed galvanostatic mode are presented. Correlations between pore structure and anodization process parameters were determined. It was shown, that porous silicon layers formed in pulsed mode have more uniform structure than porous silicon layers obtained in linear galvanostatic mode. Porous silicon templates with aspect ratio up to 1:500 were formed with the developed approach.

Keywords

• пористый кремний
• импульсное электрохимическое анодирование
• полупроводниковая пористая матрица