Bandgap Engineering and Near-Infrared-II Optical Properties of Monolayer MoS2: A First-Principle Study

Abstract

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The fluorescence-based optical imaging in the second near-infrared region (NIR-II, 1,000–1,700 nm) has broad applications in the biomedical field, but it is still difficult to find new NIR-II fluorescence materials in the two dimension. As a crucial characteristic of the electronic structure, the band structure determines the fundamental properties of two-dimensional materials, such as their optical excitations and electronic transportation. Therefore, we calculated the electronic structures and optical properties of different crystalline phases (1T phase and 2H phase) of pure monolayer MoS2 films and found that the 1T phase has better absorption and thus better fluorescence in the NIR-II window. However, its poor stability makes the 1T-phase MoS2 less useful in vivo bioimaging. By introducing vacancy defects and doping with foreign atoms, we successfully tuned the bandgap of the monolayer 2H-MoS2 and activated it in the NIR-II. Our results show that by engineering the vacancy defects, the bandgap of the 2H phase can be tailored to around 1 eV, and there are three candidates of vacancy structures that exhibit strong absorption in the NIR-II.

Keywords

• monolayer MoS2
• point defects
• electronic structure
• dielectric function
• absorption
• near-infrared-II