Heterostructures manufactured by annealing of InSe monocrystals in sulfur vapor

Abstract

InS/InSe heterostructures were created by a long-term (during 120 h) thermal processing of InSe monocrystals in sulfur vapor. Investigations of electrical and photoelectric properties of structures manufactured by this method showed essential advantage of the anysotype heterostructure n-InS/p-InSe in comparison with its isotype analog. A comparison of the spectral properties of n-InS/p-InSe heterostructures obtained at different times of annealing were performed. The quantities of interband transitions and parameters of the unit lattice cell were determined defined for the InS film.

Keywords

• heterostructure
• p-n-InSe
• InS-film