Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation
Junqiu Zhang,
Yipu Xia,
Zhoubin Yu,
Xingyu Yue,
Yuanjun Jin,
Mengfei Yuan,
Yue Feng,
Bin Li,
Bo Wang,
Wingkin Ho,
Chang Liu,
Hu Xu,
Chuanhong Jin,
Maohai Xie
Affiliations
Junqiu Zhang
Physics Department and Guangdong-Hong Kong Joint Laboratory of Quantum Matter, The University of Hong Kong, Hong Kong, China
Yipu Xia
Physics Department and Guangdong-Hong Kong Joint Laboratory of Quantum Matter, The University of Hong Kong, Hong Kong, China
Zhoubin Yu
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
Xingyu Yue
Physics Department and Guangdong-Hong Kong Joint Laboratory of Quantum Matter, The University of Hong Kong, Hong Kong, China
Yuanjun Jin
Mengfei Yuan
Physics Department and Guangdong-Hong Kong Joint Laboratory of Quantum Matter, The University of Hong Kong, Hong Kong, China
Yue Feng
Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
Bin Li
Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
Bo Wang
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
Wingkin Ho
Physics Department and Guangdong-Hong Kong Joint Laboratory of Quantum Matter, The University of Hong Kong, Hong Kong, China
Chang Liu
Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
Hu Xu
Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
Chuanhong Jin
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
Maohai Xie
Physics Department and Guangdong-Hong Kong Joint Laboratory of Quantum Matter, The University of Hong Kong, Hong Kong, China
Monolayer (ML) transition-metal dichalcogenides (TMDs) have attracted a lot of research interest in recent years due to their many interesting properties as well as their application promises. Depending on the specific combinations of metals (e.g., Mo and W) with chalcogen elements (e.g., S, Se, and Te), binary TMDs exhibit a wide spectrum of physical characteristics, e.g., from metal to semiconductor and/or superconductor. Extension from binary to ternary compounds and alloys may offer even wider variations of properties and are thus of interest from both fundamental and practical points of view. In this work, we substitute Mo for niobium (Nb) and rhenium (Re) in ML MoSe2 during molecular-beam epitaxy and probe their effects on structural and electrical properties. We find that low-concentration Nb and Re in ML-MoSe2 are both shallow dopants, with Re being an electron donor and Nb acceptor, respectively. By changing Nb(Re)/Mo flux ratios, we can effectively tune the Fermi level by varying electron or hole concentrations in MoSe2. On the other hand, both Nb and Re are found to cause mirror-twin domain boundary defects to proliferate in MoSe2.
