Photothermal effects induced by laser radiation in a 2D axi-symmetric generalized thermoelastic semiconducting half space using MGL model

Abstract

In this paper, a novel model based on the strain-temperature rate-dependent theory is investigated to study the coupling influences of thermal, elastic, and plasma waves during the photothermal process in a 2D axi-symmetric semiconducting half space. The surface absorption technique is used to illuminate the surface of the medium by a laser beam whose temporal and spatial profiles are Gaussian, moreover, the surface is also considered traction free. Integral transform method is applied using Laplace and Hankel transformations to obtain a general solution to the considered problem. Inverse Laplace transform is obtained computationally using Rimann-Sum approximation. Silicon element is chosen as an application to show the compatibility of the results of the MGL model with GL and CTE models, moreover the relaxation times effects of the new model were studied.

Keywords

• Modified Green-Lindsay model
• Generalized thermoelasticity
• Plasma
• Surface absorption
• Laser radiation