Nature Communications (Jan 2020)
Ultrasensitive negative capacitance phototransistors
- Luqi Tu,
- Rongrong Cao,
- Xudong Wang,
- Yan Chen,
- Shuaiqin Wu,
- Fang Wang,
- Zhen Wang,
- Hong Shen,
- Tie Lin,
- Peng Zhou,
- Xiangjian Meng,
- Weida Hu,
- Qi Liu,
- Jianlu Wang,
- Ming Liu,
- Junhao Chu
Affiliations
- Luqi Tu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Rongrong Cao
- University of Chinese Academy of Sciences
- Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University
- Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Qi Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Ming Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41467-019-13769-z
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 8
Abstract
Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature.
