Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory
Ting-Yu Chang,
Kuan-Chi Wang,
Hsien-Yang Liu,
Jing-Hua Hseun,
Wei-Cheng Peng,
Nicolò Ronchi,
Umberto Celano,
Kaustuv Banerjee,
Jan Van Houdt,
Tian-Li Wu
Affiliations
Ting-Yu Chang
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Kuan-Chi Wang
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Hsien-Yang Liu
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Jing-Hua Hseun
Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Wei-Cheng Peng
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Nicolò Ronchi
Imec, 3000 Leuven, Belgium
Umberto Celano
Imec, 3000 Leuven, Belgium
Kaustuv Banerjee
Imec, 3000 Leuven, Belgium
Jan Van Houdt
Imec, 3000 Leuven, Belgium
Tian-Li Wu
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO2 MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO2 MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO2 MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory.
