Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

Abstract

Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth. Here, silicon-based microwave-photonics presents a solution that features easy and inexpensive fabrication through a mature platform that has long served the electronics industry. In this work, the design of an electro-optic modulator is proposed where the ‘fin’ structure is adopted from the domain of electronics devices, with emphasis on the high speed of operation. The proposed modulator is customized to provide a bandwidth of 90 GHz with a small phase shifter length of 800 μm and an optical insertion loss of 4 dB. With such a speed, this proposed modulator fits high-speed applications such as modern tele-communications systems.

Keywords

• cmos
• integrated optics
• silicon photonics
• modulators