High power and low critical current density spin transfer torque nano-oscillators using MgO barriers with intermediate thickness

Abstract

Abstract Reported steady-state microwave emission in magnetic tunnel junction (MTJ)-based spin transfer torque nano-oscillators (STNOs) relies mostly on very thin insulating barriers [resulting in a resistance × area product (R × A) of ~1 Ωμm2] that can sustain large current densities and thus trigger large orbit magnetic dynamics. Apart from the low R × A requirement, the role of the tunnel barrier in the dynamics has so far been largely overlooked, in comparison to the magnetic configuration of STNOs. In this report, STNOs with an in-plane magnetized homogeneous free layer configuration are used to probe the role of the tunnel barrier in the dynamics. In this type of STNOs, the RF modes are in the GHz region with integrated matched output powers (P out ) in the range of 1–40 nW. Here, P o u t values up to 200 nW are reported using thicker insulating barriers for junctions with R × A values ranging from 7.5 to 12.5 Ωμm2, without compromising the ability to trigger self-sustained oscillations and without any noticeable degradation of the signal linewidth (Γ). Furthermore, a decrease of two orders of magnitude in the critical current density for spin transfer torque induced dynamics (J STT ) was observed, without any further change in the magnetic configuration.