The band alignment of nonpolar m-plane ZnO1−xSx/Mg0.4Zn0.6O heterojunctions
Lei Li,
Mi Zhang,
Qile Wang,
Pai Li,
Mingkai Li,
Yinmei Lu,
Hong Chen,
Yunbin He
Affiliations
Lei Li
Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab of Ferro and Piezoelectric Materials and Devices, Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Mi Zhang
Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab of Ferro and Piezoelectric Materials and Devices, Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Qile Wang
Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab of Ferro and Piezoelectric Materials and Devices, Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Pai Li
Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab of Ferro and Piezoelectric Materials and Devices, Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Mingkai Li
Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab of Ferro and Piezoelectric Materials and Devices, Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Yinmei Lu
Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab of Ferro and Piezoelectric Materials and Devices, Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Hong Chen
School of Materials Science and Energy Engineering, Foshan University, Foshan 528000, China
Yunbin He
Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab of Ferro and Piezoelectric Materials and Devices, Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Heterostructures such as heterojunctions, quantum wells, and superlattices are core components of advanced optoelectronic devices. Herein, we attempted the first investigations on the band alignment of nonpolar m-plane oriented ZnO1−xSx/Mg0.4Zn0.6O heterojunctions by X-ray photoelectron spectroscopy. All the heterojunctions were revealed to show a type-I band alignment, and the valence band offset (VBO; ΔEV) increased significantly, while the conduction band offset (ΔEC) decreased insignificantly with increasing S content in the ZnO1−xSx layer. Specifically, for the ZnO1−xSx/Mg0.4Zn0.6O heterojunctions with x = 0, 0.13, and 0.22, ΔEV (ΔEC) was determined to be 0.24 (0.22), 0.61 (0.17), and 0.79 (0.11) eV, respectively. The VBOs of ZnOS/MgZnO heterojunctions are significantly larger than those of heterojunctions involving only cation-substituted alloys (ZnO/MgZnO or ZnO/CdZnO) due to the opposite shift in the VB maximum of ZnOS and MgZnO with respect to ZnO. Knowing band alignment parameters of the ZnOS/MgZnO interface can provide a better understanding of the carrier transport mechanism and rational design of ZnO-based optoelectronic devices.
