Optical rectification in 4H-SiC: paving the way to generate strong terahertz fields with ultra-wide bandwidth

Abstract

The 4H-SiC crystal is found to have great potential in terahertz generation via nonlinear optical frequency conversion due to its extremely high optical damage threshold, wide transparent range, etc. In this paper, optical rectification (OR) with tilted-pulse-front (TPF) setting based on the 4H-SiC crystal is proposed. The theory accounts for the optimization of incident pulse pre-chirping in the TPF OR process under high-intensity femtosecond laser pumping. Compared with the currently recognized LiNbO3-based TPF OR, which generates a single-cycle terahertz pulse within 3 THz, 4H-SiC demonstrates a significant advantage in producing ultra-widely tunable (up to over 14 THz, TPF angle 31°–38°) terahertz waves with high efficiency (~10–2) and strong field (~MV/cm). Besides, the spectrum characteristics, as well as the evolution from single- to multi-cycle terahertz pulses can be modulated flexibly by pre-chirping. The simulation results show that 4H-SiC enables terahertz frequency extending to an unprecedent range by OR, which has extremely important potential in strong-field terahertz applications.

Keywords

• optical rectification
• silicon carbide
• terahertz radiation
• tilted-pulse-front