Sensing with extended gate negative capacitance ferroelectric field-effect transistors
Honglei Xue,
Yue Peng,
Qiushi Jing,
Jiuren Zhou,
Genquan Han,
Wangyang Fu
Affiliations
Honglei Xue
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Yue Peng
School of Microelectronics, Xidian Univeristy, Xi'an 710071, China
Qiushi Jing
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Jiuren Zhou
School of Microelectronics, Xidian Univeristy, Xi'an 710071, China
Genquan Han
School of Microelectronics, Xidian Univeristy, Xi'an 710071, China; Corresponding author.
Wangyang Fu
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China; Corresponding author.
With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive field-effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-efficient ISFET was proposed based on a metal–ferroelectric–insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.
