Raw and processed data used in the simultaneous analysis of electrical characteristics and microstructure of crystallised PEDOT:PSS based OECTs under strain
J.G. Troughton,
B. Marchiori,
R. Delattre,
S. Escoubas,
MY. Aliouat,
S. Grigorian,
M. Ramuz
Affiliations
J.G. Troughton
Department of Flexible Electronics, Mines Saint-Etienne, Center of Microelectronics in Provence, Gardanne, France
B. Marchiori
Department of Flexible Electronics, Mines Saint-Etienne, Center of Microelectronics in Provence, Gardanne, France
R. Delattre
Department of Flexible Electronics, Mines Saint-Etienne, Center of Microelectronics in Provence, Gardanne, France
S. Escoubas
Aix Marseille University, Université de Toulon, CNRS, IM2NP, Marseille, France
MY. Aliouat
Aix Marseille University, Université de Toulon, CNRS, IM2NP, Marseille, France; Ecole Nationale Supérieure des Mines et de la Métallurgie, L3M, Annaba, Algeria
S. Grigorian
Institute of Physics, University of Siegen, D-57068 Siegen, Germany
M. Ramuz
Department of Flexible Electronics, Mines Saint-Etienne, Center of Microelectronics in Provence, Gardanne, France; Corresponding author.
Here is presented raw and analysed data collected during study of the evolution, with uniaxial stretching, of the electrical and microcrystalline characteristics of polystyrene sulfonate doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) organic electrochemical transistors (OECTs). X-ray diffraction data from GIWAXS measurements of the PEDOT:PSS material, performed at the SOLEIL light source are presented in raw and partially analysed forms. Current-voltage data, collected concurrently with the GIWAXS data, are also presented, and the evolution of the transconductance of the OECT devices with stretching is shown. GIWAXS data are only examined along the qz specular reflection ridge, and scans along this ridge are extracted and presented. However, the off-specular data may also be of interest to readers and is therefore made available here in its entirety.
