Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Rizwan Ur Rehman Sagar; Min Zhang; Xiaohao Wang; Babar Shabbir; Florian J. Stadler

Nano Materials Science (Dec 2020)

Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Rizwan Ur Rehman Sagar,
Min Zhang,
Xiaohao Wang,
Babar Shabbir,
Florian J. Stadler

Affiliations

Rizwan Ur Rehman Sagar: Nanshan District Key Lab for Biopolymers and Safety Evaluation, Shenzhen Key Laboratory of Polymer Science and Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China; Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China; Corresponding author. Nanshan District Key Lab for Biopolymers and Safety Evaluation, Shenzhen Key Laboratory of Polymer Science and Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China.
Min Zhang: Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China; Corresponding author.
Xiaohao Wang: Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
Babar Shabbir: Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
Florian J. Stadler: Nanshan District Key Lab for Biopolymers and Safety Evaluation, Shenzhen Key Laboratory of Polymer Science and Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, China; Corresponding author.

Journal volume & issue: Vol. 2, no. 4
pp. 346 – 352

Abstract

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Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

Published in Nano Materials Science

ISSN: 2589-9651 (Online)
Publisher: KeAi Communications Co., Ltd.
Country of publisher: China
LCC subjects: Technology: Engineering (General). Civil engineering (General)
Website: https://www.keaipublishing.com/en/journals/nano-materials-science/

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