Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
Panpan Zheng,
Bingyang Cai,
Tao Zhu,
Li Yu,
Wenjie Wu,
Liangcheng Tu
Affiliations
Panpan Zheng
WuHan National Laboratory for Optoelectronics, Wuhan 430074, China
Bingyang Cai
The MOE Key Laboratory of Fundamental, Physical Quantities Measurement, Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
Tao Zhu
Beijing Institute of Smart Energy (BISE), Beijing 100085, China
Li Yu
The MOE Key Laboratory of Fundamental, Physical Quantities Measurement, Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
Wenjie Wu
The MOE Key Laboratory of Fundamental, Physical Quantities Measurement, Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
Liangcheng Tu
TianQin Research Center for Gravitational Physics, School of Physics and Astronomy, Sun Yat-sen University, Zhuhai 519000, China
The measurements of wafers’ surface profile are crucial for safeguarding the fabrication quality of integrated circuits and MEMS devices. The current techniques measure the profile mainly by moving a capacitive or optical spacing sensing probe along multiple lines, which is high-cost and inefficient. This paper presents the calculation, simulation and experiment of a method for measuring the surface profile with arrayed capacitive spacing transducers. The calculation agreed well with the simulation and experiment. Finally, the proposed method was utilized for measuring the profile of a silicon wafer. The result is consistent with that measured by a commercial instrument. As a movement system is not required, the proposed method is promising for industry applications with superior cost and efficiency to the existing technology.
